MOS Characteristics of NH3-Nitrided N2O-Annealed Oxides Fabricated at Reduced Pressure

Giwan Yoon; Yefim Epstein

doi:https://doi.org/10.7567/SSDM.1999.A-12-1

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜 1999年9月24日
Nihon Toshi Center Kaikan, Tokyo, Japan

[A-12-1] MOS Characteristics of NH3-Nitrided N2O-Annealed Oxides Fabricated at Reduced Pressure

Giwan Yoon、Yefim Epstein (1.Digital Semiconductor, Hudson、2.School of Engineering, Information & Communications University (ICU)、3.Intel Massachusetts)

https://doi.org/10.7567/SSDM.1999.A-12-1

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