[A-12-2] Novel Ultra Thin Heavily Nitrided Gate Dielectrics Technology Adding Fluorine for Highly Reliable MOSFETs

N. Morosawa, H. Kotaki, S. Kakimoto, K. Ohta, N. Hashizume (1.Advanced Technology Research Laboratories, Sharp Corporation)

https://doi.org/10.7567/SSDM.1999.A-12-2