[A-12-2] Novel Ultra Thin Heavily Nitrided Gate Dielectrics Technology Adding Fluorine for Highly Reliable MOSFETs

N. Morosawa、H. Kotaki、S. Kakimoto、K. Ohta、N. Hashizume (1.Advanced Technology Research Laboratories, Sharp Corporation)

https://doi.org/10.7567/SSDM.1999.A-12-2