[A-12-3] Latent Damage Generation in Submicrometer MOS Devices Under High-Field Impulse Stressing and Its Characterization Using Flicker Noise Measurement

W. K. Chim, P. S. Lim, B. P. Yeo, D. S. H. Chan, G. L. Teh (1.Centre for Integrated Circuit Failure Analysis and Reliability, Faculty of Engineering National University of Singapore)

https://doi.org/10.7567/SSDM.1999.A-12-3