[A-15-3] Enhanced Recovery from Back-End Process Damage by Conductive Perovskite Electrode for BST Capacitor

Y. Fukuzumi、K. Natori、M. Izuha、K. Eguchi、K. Hieda、Y. Ishibashi、Y. Kohyama、A. Nitayama (1.Microelectronics Engineering Laboratory, Toshiba Corporation Semiconductor Company)

https://doi.org/10.7567/SSDM.1999.A-15-3