Fabrication of the Si/Al2O3/SiO2/Si Structure by Using the O2 Annealed Al2O3/Si Structure

Hirotsugu HORI; Fumitaka KONDO; Daisuke AKAI; Kazuaki Sawada; Makoto ISHIDA

doi:https://doi.org/10.7567/SSDM.1999.A-16-3

1999 International Conference on Solid State Devices and Materials

Sep 21, 1999 - Sep 24, 1999
Nihon Toshi Center Kaikan, Tokyo, Japan

[A-16-3] Fabrication of the Si/Al2O3/SiO2/Si Structure by Using the O2 Annealed Al2O3/Si Structure

Hirotsugu HORI, Fumitaka KONDO, Daisuke AKAI, Kazuaki Sawada, Makoto ISHIDA (1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)

https://doi.org/10.7567/SSDM.1999.A-16-3

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