Reduction of Base Resistance and Enhancement of Cutoff Frequency of High-Speed Si Bipolar Transistor Using Rapid Vapor-Phase Doping

Yukihiro Kiyota; Katsuyoshi Washio; Toshiyuki Kikuchi; Taroh Inada

doi:https://doi.org/10.7567/SSDM.1999.A-5-2

[A-5-2] Reduction of Base Resistance and Enhancement of Cutoff Frequency of High-Speed Si Bipolar Transistor Using Rapid Vapor-Phase Doping

Yukihiro Kiyota, Katsuyoshi Washio, Toshiyuki Kikuchi, Taroh Inada (1.Central Research Laboratory, Hitachi, 2.Device Development Center, Hitachi, 3.College of Engineering, Hosei university)

https://doi.org/10.7567/SSDM.1999.A-5-2

1999 International Conference on Solid State Devices and Materials

[A-5-2] Reduction of Base Resistance and Enhancement of Cutoff Frequency of High-Speed Si Bipolar Transistor Using Rapid Vapor-Phase Doping