Reduction of Base Resistance and Enhancement of Cutoff Frequency of High-Speed Si Bipolar Transistor Using Rapid Vapor-Phase Doping

Yukihiro Kiyota; Katsuyoshi Washio; Toshiyuki Kikuchi; Taroh Inada

doi:https://doi.org/10.7567/SSDM.1999.A-5-2

[A-5-2] Reduction of Base Resistance and Enhancement of Cutoff Frequency of High-Speed Si Bipolar Transistor Using Rapid Vapor-Phase Doping

Yukihiro Kiyota、Katsuyoshi Washio、Toshiyuki Kikuchi、Taroh Inada (1.Central Research Laboratory, Hitachi、2.Device Development Center, Hitachi、3.College of Engineering, Hosei university)

https://doi.org/10.7567/SSDM.1999.A-5-2

1999 International Conference on Solid State Devices and Materials

[A-5-2] Reduction of Base Resistance and Enhancement of Cutoff Frequency of High-Speed Si Bipolar Transistor Using Rapid Vapor-Phase Doping