New Guidelines of Optimizing SALICIDE Structure for High Speed CMOS LSI

K. Miyashita; K. Ohuchi; H. Yoshimura; T. Iinuma; K. Suguro; Y. Toyoshima

doi:https://doi.org/10.7567/SSDM.1999.A-6-1

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜 1999年9月24日
Nihon Toshi Center Kaikan, Tokyo, Japan

[A-6-1] New Guidelines of Optimizing SALICIDE Structure for High Speed CMOS LSI

K. Miyashita、K. Ohuchi、H. Yoshimura、T. Iinuma、K. Suguro、Y. Toyoshima (1.Microelectronics Engineering Laboratory, Toshiba Corporation Semiconductor Company)

https://doi.org/10.7567/SSDM.1999.A-6-1

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