New Guidelines of Optimizing SALICIDE Structure for High Speed CMOS LSI

K. Miyashita; K. Ohuchi; H. Yoshimura; T. Iinuma; K. Suguro; Y. Toyoshima

doi:https://doi.org/10.7567/SSDM.1999.A-6-1

1999 International Conference on Solid State Devices and Materials

Sep 21, 1999 - Sep 24, 1999
Nihon Toshi Center Kaikan, Tokyo, Japan

[A-6-1] New Guidelines of Optimizing SALICIDE Structure for High Speed CMOS LSI

K. Miyashita, K. Ohuchi, H. Yoshimura, T. Iinuma, K. Suguro, Y. Toyoshima (1.Microelectronics Engineering Laboratory, Toshiba Corporation Semiconductor Company)

https://doi.org/10.7567/SSDM.1999.A-6-1

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