[A-7-2] A Novel Diffusion Resistant P-Base Region Implantation for Accumulation-Mode 4H-SiC Epi-Channel Field Effect Transistor

Rajesh Kumar、Jun Kozima、Tsuyoshi Yamamoto (1.Research Laboratories, DENSO CORPORATION)

https://doi.org/10.7567/SSDM.1999.A-7-2