[B-15-1] Improvement in Sheet Resistance of Sb-Doped Ultra Shallow Junction by Dopant Pileup Reduction at the SiO2/Si Interface

Kentaro Shibahara、Kazuhiko Egusa、Koji Kamesaki (1.Research Center for Nanodevices and Systems, Hiroshima University)

https://doi.org/10.7567/SSDM.1999.B-15-1