The Japan Society of Applied Physics

[B-15-1] Improvement in Sheet Resistance of Sb-Doped Ultra Shallow Junction by Dopant Pileup Reduction at the SiO2/Si Interface

Kentaro Shibahara, Kazuhiko Egusa, Koji Kamesaki (1.Research Center for Nanodevices and Systems, Hiroshima University)

https://doi.org/10.7567/SSDM.1999.B-15-1