[B-2-2] High Performance Buried Channel-pFETs Using Elevated Source/Drain Structure with Self-Aligned Epitaxial Silicon Sliver (SESS)

J. H. Lee, S. C. Lee, N. Y. Kwak, I. S. Yeo, C. Y. Yeom, S. Ritterbush, S. K. Lee, C. T. Kim (1.Semiconductor Advanced Research Div., HYUNDAI Electronics Industries Co., 2.Applied Materials Korea, 3.Applied Materials)

https://doi.org/10.7567/SSDM.1999.B-2-2