High Performance Buried Channel-pFETs Using Elevated Source/Drain Structure with Self-Aligned Epitaxial Silicon Sliver (SESS)

J. H. Lee; S. C. Lee; N. Y. Kwak; I. S. Yeo; C. Y. Yeom; S. Ritterbush; S. K. Lee; C. T. Kim

doi:https://doi.org/10.7567/SSDM.1999.B-2-2

[B-2-2] High Performance Buried Channel-pFETs Using Elevated Source/Drain Structure with Self-Aligned Epitaxial Silicon Sliver (SESS)

J. H. Lee、S. C. Lee、N. Y. Kwak、I. S. Yeo、C. Y. Yeom、S. Ritterbush、S. K. Lee、C. T. Kim (1.Semiconductor Advanced Research Div., HYUNDAI Electronics Industries Co.、2.Applied Materials Korea、3.Applied Materials)

https://doi.org/10.7567/SSDM.1999.B-2-2

1999 International Conference on Solid State Devices and Materials

[B-2-2] High Performance Buried Channel-pFETs Using Elevated Source/Drain Structure with Self-Aligned Epitaxial Silicon Sliver (SESS)