Study of an Elevated Drain Fabrication Method for Ultra Shallow Junction

M. Nakano; H. Kotaki; K. Sugimoto; T. Okumine; F. Yoshioka; S. Kakimoto; K. Ohta; N. Hashizume

doi:https://doi.org/10.7567/SSDM.1999.B-2-3

1999 International Conference on Solid State Devices and Materials

Sep 21, 1999 - Sep 24, 1999
Nihon Toshi Center Kaikan, Tokyo, Japan

[B-2-3] Study of an Elevated Drain Fabrication Method for Ultra Shallow Junction

M. Nakano, H. Kotaki, K. Sugimoto, T. Okumine, F. Yoshioka, S. Kakimoto, K. Ohta, N. Hashizume (1.Advanced Technology Research Laboratories, Sharp Corporation)

https://doi.org/10.7567/SSDM.1999.B-2-3

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