[B-2-4] Novel Impurity Activation Technology Using Gate Poly-Si Oxidation

N. Morosawa, H. Kotaki, S. Kakimoto, M. Yamanaka, K. Ohta, N. Hashizume (1.Advanced Technology Research Laboratories, Sharp Corporation)

https://doi.org/10.7567/SSDM.1999.B-2-4