[B-2-4] Novel Impurity Activation Technology Using Gate Poly-Si Oxidation

N. Morosawa、H. Kotaki、S. Kakimoto、M. Yamanaka、K. Ohta、N. Hashizume (1.Advanced Technology Research Laboratories, Sharp Corporation)

https://doi.org/10.7567/SSDM.1999.B-2-4