High-Integrity Silicon Oxide Grown at Low-Temperature by Atomic Oxygen Generated in High-Density Krypton Plasma

Yuji Saito; Katsuyuki Sekine; Masaki Hiramaya; Tadahiro Ohmi

doi:https://doi.org/10.7567/SSDM.1999.B-3-2

[B-3-2] High-Integrity Silicon Oxide Grown at Low-Temperature by Atomic Oxygen Generated in High-Density Krypton Plasma

Yuji Saito、Katsuyuki Sekine、Masaki Hiramaya、Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University、2.New Industry Creation Hatchery Center, Tohoku University)

https://doi.org/10.7567/SSDM.1999.B-3-2

1999 International Conference on Solid State Devices and Materials

[B-3-2] High-Integrity Silicon Oxide Grown at Low-Temperature by Atomic Oxygen Generated in High-Density Krypton Plasma