[B-4-2] Sub 1.3nm Amorphous Ta2O5 Gate Dielectrics for Damascene Metal Gate Transistor
Seiji Inumiya, Atsushi Yagishita, Tomohiro Saito, Masaki Hotta, Yoshio Ozawa, Kyoichi Suguro, Yoshitaka Tsunashima, Tsunetoshi Arikado
(1.Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation)
https://doi.org/10.7567/SSDM.1999.B-4-2
