[B-4-4] Reliable High-k TiO2 Gate Insulator Formed by Ultrathin TiN Deposition and Low Temperature Oxidation

Kohji Matsuo, Kazuaki Nakajima, Seiichi Omoto, Shinich Nakamura, Atsushi Yagishita, Gaku Minamihaba, Hiroyuki Yano, Kyoichi Suguro (1.Microelectronics Engineering Laboratory, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1999.B-4-4