[B-4-4] Reliable High-k TiO2 Gate Insulator Formed by Ultrathin TiN Deposition and Low Temperature Oxidation

Kohji Matsuo、Kazuaki Nakajima、Seiichi Omoto、Shinich Nakamura、Atsushi Yagishita、Gaku Minamihaba、Hiroyuki Yano、Kyoichi Suguro (1.Microelectronics Engineering Laboratory, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1999.B-4-4