Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi2Ta2O9 Film and SrTa2O6/SiON Buffer Layer

Eisuke Tokumitsu; Gen Fujii; Hiroshi Ishiwara

doi:https://doi.org/10.7567/SSDM.1999.C-10-2

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜 1999年9月24日
Nihon Toshi Center Kaikan, Tokyo, Japan

[C-10-2] Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi2Ta2O9 Film and SrTa2O6/SiON Buffer Layer

Eisuke Tokumitsu、Gen Fujii、Hiroshi Ishiwara (1.Precision & Intelligence Laboratory, Frontier Collaborative Research Center, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1999.C-10-2

▲