Deep Neutral Oxide Traps Near Midgap at Corners of Nonplanar MOS-Capacitors

T. Ono; M. Miura-Mattausch; H. Baumgaertner; H. J. Mattausch

doi:https://doi.org/10.7567/SSDM.1999.C-12-3

[C-12-3] Deep Neutral Oxide Traps Near Midgap at Corners of Nonplanar MOS-Capacitors

T. Ono, M. Miura-Mattausch, H. Baumgaertner, H. J. Mattausch (1.Department of Electrical Engineering, Hiroshima University, 2.Research Center for Nano-device and Systems, Hiroshima University, 3.Fakultaet fuer Elektrotechnik, Universitaet der Bundeswehr Muenchen)

https://doi.org/10.7567/SSDM.1999.C-12-3

1999 International Conference on Solid State Devices and Materials

[C-12-3] Deep Neutral Oxide Traps Near Midgap at Corners of Nonplanar MOS-Capacitors