[C-12-4] New ONO Layer Using Nitrogenized Bottom Oxide for Flash Memory Application

C. J. Lin、J. Chen、H. D. Su、J. R. Shih、D. S. Kuo、M. S. Liang (1.R&D Division, Taiwan Semiconductor Manufacturing Company (TSMC))

https://doi.org/10.7567/SSDM.1999.C-12-4