[C-12-4] New ONO Layer Using Nitrogenized Bottom Oxide for Flash Memory Application

C. J. Lin, J. Chen, H. D. Su, J. R. Shih, D. S. Kuo, M. S. Liang (1.R&D Division, Taiwan Semiconductor Manufacturing Company (TSMC))

https://doi.org/10.7567/SSDM.1999.C-12-4