[C-5-2] High-Gain Multi-Finger AlGaN/GaN HJFETs with 0.3-μm Gate-Length for K- and Ka-Band Applications

K. Kunihiro、K. Kasahara、Y. Takahashi、Y. Ohno (1.Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.1999.C-5-2