[D-12-1] InGaP Channel FET with High Breakdown Voltage

Naoki Hara、Yasuhiro Nakasha、Toshihide Kikkawa、Kazukiyo Joshin、Yuu Watanabe Hitoshi Tanaka、Masahiko Takikawa (1.Fujitsu Laboratories Ltd.)

https://doi.org/10.7567/SSDM.1999.D-12-1