Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique

Satoshi Kodama; Tomofumi Furuta; Noriyuki Watanabe; Hiroshi Ito; Atsushi Kanda; Masahiro Muraguchi; Tadao Ishibashi

doi:https://doi.org/10.7567/SSDM.1999.D-12-2

[D-12-2] Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique

Satoshi Kodama、Tomofumi Furuta、Noriyuki Watanabe、Hiroshi Ito、Atsushi Kanda、Masahiro Muraguchi、Tadao Ishibashi (1.NTT Photonics Labs.、2.NTT Netwerk Innovation Labs.)

https://doi.org/10.7567/SSDM.1999.D-12-2

1999 International Conference on Solid State Devices and Materials

[D-12-2] Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique