[D-12-2] Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique

Satoshi Kodama, Tomofumi Furuta, Noriyuki Watanabe, Hiroshi Ito, Atsushi Kanda, Masahiro Muraguchi, Tadao Ishibashi (1.NTT Photonics Labs., 2.NTT Netwerk Innovation Labs.)

https://doi.org/10.7567/SSDM.1999.D-12-2