[D-12-3] Fabrication and Characterization of Novel Oxide-Free InP MISFETs Having an Ultra-Narrow Si Surface Quantum Well

Masatsugu Yamada、Hiroshi Takahashi、Tamotsu Hashizume、Hideki Hasegawa (1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.1999.D-12-3