[E-4-1] Suppression of Stand-by Tunnel Current in Ultra-Thin Gate Oxide MOSFETs by Dual Oxide Thickness MTCMOS(DOT-MTCMOS)

Takashi Inukai、Toshiro Hiramoto (1.Institute of Industrial Science, University of Tokyo、2.VLSI Design and Education Center, University of Tokyo)

https://doi.org/10.7567/SSDM.1999.E-4-1