Optimum Conditions of Body Effect Factor and Substrate Bias in Variable Threshold Voltage MOSFETs

Hiroshi Koura; Makoto Takamiya; Toshiro Hiramoto

doi:https://doi.org/10.7567/SSDM.1999.E-9-1

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜 1999年9月24日
Nihon Toshi Center Kaikan, Tokyo, Japan

[E-9-1] Optimum Conditions of Body Effect Factor and Substrate Bias in Variable Threshold Voltage MOSFETs

Hiroshi Koura、Makoto Takamiya、Toshiro Hiramoto (1.Institute of Industrial Science, University of Tokyo、2.VLSI Design and Education Center, University of Tokyo)

https://doi.org/10.7567/SSDM.1999.E-9-1

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