The Japan Society of Applied Physics

[LE-2-1] High Performance Sub-0.1 μm Dynamic Threshold MOSFET Using Indium Channel Implantation

S. J. Chang, C. Chen, Y. J. Lee, S. D. Wu, C. Y. Chang, T. S. Chao, J. W. Chou, Tony. Lin, T. P. Chen, S. W. Sun (1.Department of Electronic Engineering, National Chiao Tung University, 2.National Nano Device Labs., 3.United Microelectronics Corp., Technology Development Division)