[A-4-2] An Experimental Study of Reliability Improvement of a Semiconductor Memory Device with a Novel Self-Protected Fuse-Box Technique Using a Poly-Si Etch Stopper

Chi-Hoon Lee、Young-Hoon Park、Myoung-Hee Han、Eun-Young Min、Won-Hee Jang、Won-Sik Lee (1.Dram Process Architecture Team, Memory Product & Technology Division, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2000.A-4-2