[A-5-3] Ultrathin Fluorinated Silicon Nitride Gate Dielectric Films Formed by Plasma Enhanced Chemical Vapor Deposition Employing NH3 and SiF4

Hiroyuki Ohta, Atsushi Nagashima, Masaru Hori, Toshio Goto (1.Department of Quantum Engineering, Graduate School of Engineering, Nagoya University)

https://doi.org/10.7567/SSDM.2000.A-5-3