[A-5-5] Low Temperature Gate Oxidation MOS Transistor Produced by Kr/O2 Microwave Excited High-Density Plasma

Tatsufumi Hamada, Yuji Saito, Katsuyuki Sekine, Herzl Aharoni, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate school of Engineering, Tohoku University, 2.New Industry Creation Hatchery Center, Tohoku University, 3.At leave from the department of electrical and computer engineering, Ben-Gurion University of the Negev)

https://doi.org/10.7567/SSDM.2000.A-5-5