Ultra Shallow Junction Formation for 80 nm CMOS by Controlling Transient Enhanced Diffusion

K. Ohuchi; K. Adachi; A. Murakoshi; A. Hokazono; T. Kanemura; N. Aoki; M. Nishigohri; K. Suguro; Y. Toyoshima

doi:https://doi.org/10.7567/SSDM.2000.A-7-2

[A-7-2] Ultra Shallow Junction Formation for 80 nm CMOS by Controlling Transient Enhanced Diffusion

K. Ohuchi, K. Adachi, A. Murakoshi, A. Hokazono, T. Kanemura, N. Aoki, M. Nishigohri, K. Suguro, Y. Toyoshima (1.System LSI Research & Development Center, Toshiba Corporation Semiconductor Company, 2.Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 3.Advanced Logic Technology Department, Toshiba Corporation Semiconductor Company)

https://doi.org/10.7567/SSDM.2000.A-7-2

2000 International Conference on Solid State Devices and Materials

[A-7-2] Ultra Shallow Junction Formation for 80 nm CMOS by Controlling Transient Enhanced Diffusion