[A-7-4] Ultra-Shallow and Low-Leakage p+n Junctions Formation by Plasma Immersion Ion Implantation (PIII) and Low-Temperature Post-Implantation Annealing

Kei Kanemoto、Herzl Aharoni、Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University、2.New Industry Creation Hatchery Center, Tohoku University、3.At leave from the Department of Electrical and Computer Engineering, Ben-Gurion University of the Negev)

https://doi.org/10.7567/SSDM.2000.A-7-4