[B-1-4] Surface Channel Metal Gate CMOS with Light Counter Doping and Single Work Function Gate Electrode

K. T. Nishinohara、Y. Akasaka、T. Saito、A. Yagishita、A. Murakoshi、K. Suguro、T. Arikado (1.Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.)

https://doi.org/10.7567/SSDM.2000.B-1-4