[B-1-5] High Density 0.16 μm Embedded-DRAM-ASIC Process Technology for a SoC Platform

J. Ida、H. Tanaka、K. Fukuda、M. Takeda、H. Shinohara、N. Nakayama、E. Seo、K. Yoshida、H. Higashino、Y. Miyakawa、M. Kageyama、Y. Harada、M. Matsumoto、T. Inoue、F. Yokoyama (1.LSI Production Division, VLSI R&D Center, LSI Division, OKI Electric Industry Co., Ltd.)

https://doi.org/10.7567/SSDM.2000.B-1-5