[B-1-8] A Novel T-Shaped Shallow Trench Isolation Technology Using Sidewall Spacer for 512Mbit Flash Memories and Beyond

S. H. Hong, D. H. Ahn, M. H. Park, T. K. Kim, H. K. Kang, J. T. Moon (1.Semiconductor R&D Center, Samsung Electronics Co., LTD)

https://doi.org/10.7567/SSDM.2000.B-1-8