The Japan Society of Applied Physics

[B-2-5] Improved Low Temperature Characteristics of Raised Source and Drain (RSD) Si1-x Gex PMOSFET's

H. J. Huang、K. M. Chen、T. Y. Huang、G. W. Huang、C. Y. Chang (1.Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University、2.National Nano Device Laboratories)

https://doi.org/10.7567/SSDM.2000.B-2-5