[B-3-1] Edge Direct Tunneling (EDT) Induced Drain and Gate Leakage in Ultrathin Gate Oxide MOSFETs

K. N. Yang、H. T. Huang、M. J. Chen、Y. M. Lin、M. H. Yu、S. M. Jang、C. H. Yu、M. S. Liang (1.Department of Electronics Engineering, National Chiao-Tung University、2.R/D Department, Taiwan Semiconductor Manufacturing Company)

https://doi.org/10.7567/SSDM.2000.B-3-1