High Quality Ultrathin TaOxNy Gate Dielectric Prepared by Nitridation of Ta2O5

Hyungsuk Jung; Kiju Im; Sanghun Jeon; Dooyoung Yang; Hyunsang Hwang

doi:https://doi.org/10.7567/SSDM.2000.B-5-6

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜 2000年8月31日
Sendai International Center, Sendai, Japan

[B-5-6] High Quality Ultrathin TaOxNy Gate Dielectric Prepared by Nitridation of Ta2O5

Hyungsuk Jung、Kiju Im、Sanghun Jeon、Dooyoung Yang、Hyunsang Hwang (1.Dept. of Materials Sci. & Eng., Kwangju Institute of Science and Technology、2.Jusung Engineering)

https://doi.org/10.7567/SSDM.2000.B-5-6

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