TaOxNy Gate Dielectric with Improved Thermal Stability

Heung-Jae Cho; Dae-Gyu Park; In-Seok Yeo; Jae-Sung Roh; Jeong-Mo Hwang

doi:https://doi.org/10.7567/SSDM.2000.B-5-7

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜 2000年8月31日
Sendai International Center, Sendai, Japan

[B-5-7] TaOxNy Gate Dielectric with Improved Thermal Stability

Heung-Jae Cho、Dae-Gyu Park、In-Seok Yeo、Jae-Sung Roh、Jeong-Mo Hwang (1.Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.)

https://doi.org/10.7567/SSDM.2000.B-5-7

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