Atomic Scale Characterization of Nitridation Process on Si(100)-2x1 Surfaces by Radical Nitrogen

Daisuke Matsushita; Hiroya Ikeda; Akira Sakai; Shigeaki Zaima; Yukio Yasuda

doi:https://doi.org/10.7567/SSDM.2000.B-7-4

[B-7-4] Atomic Scale Characterization of Nitridation Process on Si(100)-2x1 Surfaces by Radical Nitrogen

Daisuke Matsushita、Hiroya Ikeda、Akira Sakai、Shigeaki Zaima、Yukio Yasuda (1.Department of Crystalline Materials Science, School of Engineering, Nagoya University、2.Center for Cooperative Research in Advanced Science and Technology, Nagoya University)

https://doi.org/10.7567/SSDM.2000.B-7-4

2000 International Conference on Solid State Devices and Materials

[B-7-4] Atomic Scale Characterization of Nitridation Process on Si(100)-2x1 Surfaces by Radical Nitrogen