[B-9-4] Novel Method of Threshold Voltage Control of Metal Gate CMOSFETs Using Channel Epitaxy

W. S. Kim、S. Song、Y. Khang、T. H. Choe、J. Y. Yoo、N. I. Lee、K. Fujihara、H. K. Kang、J. T. Moon (1.Semiconductor R&D Division, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2000.B-9-4