[C-3-3] Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si Structures Operating at 3.5V

Eisuke Tokumitsu, Kojiro Okamoto, Hiroshi Ishiwara (1.Precision & Intelligence Laboratory, Frontier Collaborative Research Center, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.2000.C-3-3