[C-4-3] Studies on Improving Retention Time of Memorized State of MFIS Structure for Ferroelectric Gate FET Memory

Mitsue Takahashi, Hideki Sugiyama, Toshiyuki Nakaiso, Minoru Noda, Masanori Okuyama (1.Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University)

https://doi.org/10.7567/SSDM.2000.C-4-3